Prospects and advancements in C-reactive protein detection

Table 1 Various C-reactive protein detection techniques and their characteristics

No.	Technique employed	Features	Ref.
1	Radial Immunodiffusion	Qualitative analysis in less than 48 h	Harris et al[8], 1984
2	Latex agglutination	Time taken less than 24 h; qualitative analysis	Senju et al[9], 1986
3	Latex piezoelectric assay	Uses quartz crystal and latex bearing antibody; more sensitive than conventional methods; less time required.	Kurosawa et al[10], 1990
4	Immunoenzymometric Immunoassay	Single immunological reaction; sensitive; results comparable to turbidimetric detection	Käpyaho et al[11], 1990
5	Surface plasma resonance spectrophotometry	High sensitivity; on-site analysis; SAM usage	Kim et al[15], 2008
6	Silicon nanowire based assays	Micro-machining technology; higher detection limit	Lee et al[16], 2008
7	MOFSET/BJT based technique	High sensitivity, change in capacitance measurement; reliable; small size; ease of manufacturing; good selectivity; highly reproducible; high trans conductivity	Yuan et al[17], 2011
8	Electrochemical Immunosensor	Detection by square wave stripping voltammetry; quantitative analysis of 2 biomarkers; reproducible	Zhou et al[18], 2010
9	Nanotechnology using ZnS nanoparticles	Detection by fluorescence spectrophotometry; highly sensitive; non-toxic; low cast system; highly specific	Cowles et al[19], 2011
10	RNA aptamer based technology	Uses Carbon nanotube’s interdigitated electrodes of capacitors; highly selective	Qureshi et al[20], 2012
11	Biosensor using FET	Involves SBP linked in protein A; point of care testing system; on-site analysis	Kim et al[21], 2013
12	Vertical flow Immunoassay	One-step assay; time taken 2 min; most rapid; employs gold nanoparticles	Oh et al[22], 2013
13	Electrochemical impedance spectroscopy	Most advanced technique; uses gold and diamond spray in fabrication; highly sensitive; reusable without sensitivity being lost; good detection limit	Bryan et al[23], 2013

FET: Field emission transmitter; MOFSET/BJT: Metal-oxide-semiconductor field-effect transistor/bipolar junction transistor; SAM: Self-assembled monolayer; SBP: Silicon binding protein.