Peripheral dose measurement in high-energy photon radiotherapy with the implementation of MOSFET

doi:10.4329/wjr.v2.i11.434

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Nov 28, 2010 (publication date) through Apr 26, 2024

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World Journal of Radiology

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1949-8470

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Baishideng Publishing Group Inc, 7041 Koll Center Parkway, Suite 160, Pleasanton, CA 94566, USA

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World J Radiol. Nov 28, 2010; 2(11): 434-439
Published online Nov 28, 2010. doi: 10.4329/wjr.v2.i11.434

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Figure 5 Percentage peripheral dose obtained with metal oxide semiconductor field effect transistor and the ionization chamber for various field sizes as a function of distance from the surface using the (A) 6 MV and (B) 18 MV beam. MOSFET: Metal oxide semiconductor field effect transistor.

Citation: Vlachopoulou V, Malatara G, Delis H, Theodorou K, Kardamakis D, Panayiotakis G. Peripheral dose measurement in high-energy photon radiotherapy with the implementation of MOSFET. World J Radiol 2010; 2(11): 434-439
URL: https://www.wjgnet.com/1949-8470/full/v2/i11/434.htm
DOI: https://dx.doi.org/10.4329/wjr.v2.i11.434