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Cited by in F6Publishing
For: Peng M, Xie R, Wang Z, Wang P, Wang F, Ge H, Wang Y, Zhong F, Wu P, Ye J, Li Q, Zhang L, Ge X, Ye Y, Lei Y, Jiang W, Hu Z, Wu F, Zhou X, Miao J, Wang J, Yan H, Shan C, Dai J, Chen C, Chen X, Lu W, Hu W. Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition. Sci Adv 2021;7:eabf7358. [PMID: 33863732 DOI: 10.1126/sciadv.abf7358] [Cited by in Crossref: 7] [Cited by in F6Publishing: 3] [Article Influence: 7.0] [Reference Citation Analysis]
Number Citing Articles
1 Ma W, Gao Y, Shang L, Zhou W, Yao N, Jiang L, Qiu Q, Li J, Shi Y, Hu Z, Huang Z. Ultrabroadband Tellurium Photoelectric Detector from Visible to Millimeter Wave. Adv Sci (Weinh) 2021;:e2103873. [PMID: 34923772 DOI: 10.1002/advs.202103873] [Reference Citation Analysis]
2 Wu D, Mo Z, Han Y, Lin P, Shi Z, Chen X, Tian Y, Li XJ, Yuan H, Tsang YH. Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection. ACS Appl Mater Interfaces 2021;13:41791-801. [PMID: 34431296 DOI: 10.1021/acsami.1c11277] [Cited by in Crossref: 2] [Article Influence: 2.0] [Reference Citation Analysis]
3 Wang Y, Gu Y, Cui A, Li Q, He T, Zhang K, Wang Z, Li Z, Zhang Z, Wu P, Xie R, Wang F, Wang P, Shan C, Li H, Ye Z, Zhou P, Hu W. Fast Uncooled Mid-Wavelength Infrared Photodetectors with Heterostructures of van der Waals on Epitaxial HgCdTe. Adv Mater 2021;:e2107772. [PMID: 34812559 DOI: 10.1002/adma.202107772] [Reference Citation Analysis]
4 Kwon D, Kim JY, Lee SH, Lee E, Kim J, Harit AK, Woo HY, Joo J. Charge-Transfer Effect and Enhanced Photoresponsivity of WS2- and MoSe2-Based Field Effect Transistors with π-Conjugated Polyelectrolyte. ACS Appl Mater Interfaces 2021;13:40880-90. [PMID: 34424668 DOI: 10.1021/acsami.1c09386] [Cited by in Crossref: 1] [Article Influence: 1.0] [Reference Citation Analysis]
5 Yan W, Johnson BC, Balendhran S, Cadusch J, Yan D, Michel JI, Wang S, Zheng T, Crozier K, Bullock J. Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials. ACS Appl Mater Interfaces 2021;13:45881-9. [PMID: 34523918 DOI: 10.1021/acsami.1c12564] [Reference Citation Analysis]
6 Zhong F, Ye J, He T, Zhang L, Wang Z, Li Q, Han B, Wang P, Wu P, Yu Y, Guo J, Zhang Z, Peng M, Xu T, Ge X, Wang Y, Wang H, Zubair M, Zhou X, Gao P, Fan Z, Hu W. Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics. Small 2021;:e2102855. [PMID: 34647416 DOI: 10.1002/smll.202102855] [Reference Citation Analysis]
7 Chang R, Wang K, Zhang Y, Ma T, Tang J, Chen XW, Zhang B, Wang S. Tunable Performance of Quantum Dot-MoS2 Hybrid Photodetectors via Interface Engineering. ACS Appl Mater Interfaces 2021;13:59411-21. [PMID: 34851094 DOI: 10.1021/acsami.1c10888] [Reference Citation Analysis]