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Cited by in F6Publishing
For: Zhang YL, Yang JH, Xiang H, Gong XG. Fully Boron-Sheet-Based Field Effect Transistors from First-Principles: Inverse Design of Semiconducting Boron Sheets. J Phys Chem Lett 2021;12:576-84. [PMID: 33382274 DOI: 10.1021/acs.jpclett.0c03333] [Cited by in Crossref: 4] [Cited by in F6Publishing: 1] [Article Influence: 4.0] [Reference Citation Analysis]
Number Citing Articles
1 Tai G, Liu B, Hou C, Wu Z, Liang X. Ultraviolet photodetector based on p-borophene/n-ZnO heterojunction. Nanotechnology 2021;32. [PMID: 34534975 DOI: 10.1088/1361-6528/ac27db] [Cited by in Crossref: 1] [Article Influence: 1.0] [Reference Citation Analysis]
2 Zhang JJ, Altalhi T, Yang JH, Yakobson BI. Semiconducting α'-boron sheet with high mobility and low all-boron contact resistance: a first-principles study. Nanoscale 2021;13:8474-80. [PMID: 33984112 DOI: 10.1039/d1nr00329a] [Cited by in Crossref: 5] [Article Influence: 5.0] [Reference Citation Analysis]
3 Kaneti YV, Benu DP, Xu X, Yuliarto B, Yamauchi Y, Golberg D. Borophene: Two-dimensional Boron Monolayer: Synthesis, Properties, and Potential Applications. Chem Rev 2021. [PMID: 34730341 DOI: 10.1021/acs.chemrev.1c00233] [Reference Citation Analysis]