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Cited by in F6Publishing
For: Romero-zaliz R, Pérez E, Jiménez-molinos F, Wenger C, Roldán JB. Study of Quantized Hardware Deep Neural Networks Based on Resistive Switching Devices, Conventional versus Convolutional Approaches. Electronics 2021;10:346. [DOI: 10.3390/electronics10030346] [Cited by in Crossref: 12] [Cited by in F6Publishing: 5] [Article Influence: 12.0] [Reference Citation Analysis]
Number Citing Articles
1 Maldonado D, Aldana S, González M, Jiménez-molinos F, Ibáñez M, Barrera D, Campabadal F, Roldán J. Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective. Microelectronic Engineering 2022;257:111736. [DOI: 10.1016/j.mee.2022.111736] [Cited by in Crossref: 1] [Article Influence: 1.0] [Reference Citation Analysis]
2 Maldonado D, Gómez-campos FM, González MB, Roldán AM, Jiménez-molinos F, Campabadal F, Roldán JB. Comprehensive study on unipolar RRAM charge conduction and stochastic features: a simulation approach. J Phys D: Appl Phys 2022;55:155104. [DOI: 10.1088/1361-6463/ac472c] [Reference Citation Analysis]
3 Romero-zaliz R, Pérez E, Jiménez-molinos F, Wenger C, Roldán J. Influence of variability on the performance of HfO2 memristor-based convolutional neural networks. Solid-State Electronics 2021;185:108064. [DOI: 10.1016/j.sse.2021.108064] [Cited by in Crossref: 1] [Cited by in F6Publishing: 1] [Article Influence: 1.0] [Reference Citation Analysis]
4 Kang H, Park J, Lee D, Kim HW, Jin S, Ahn M, Woo J. Two- and three-terminal HfO 2 -based multilevel resistive memories for neuromorphic analog synaptic elements. Neuromorph Comput Eng 2021;1:021001. [DOI: 10.1088/2634-4386/ac29ca] [Cited by in Crossref: 3] [Cited by in F6Publishing: 4] [Article Influence: 3.0] [Reference Citation Analysis]
5 Dongale TD, Kamble GU, Kang DY, Kundale SS, An H, Kim TG. Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application. Phys Status Solidi RRL 2021;15:2100199. [DOI: 10.1002/pssr.202100199] [Cited by in Crossref: 2] [Cited by in F6Publishing: 5] [Article Influence: 2.0] [Reference Citation Analysis]