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Cited by in F6Publishing
For: Yin X, Zhu H, Zhao L, Wang G, Li C, Huang W, Zhang Y, Jia K, Li J, Radamson HH. Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si 1−x Ge x. ECS J Solid State Sci Technol 2020;9:034012. [DOI: 10.1149/2162-8777/ab80ae] [Cited by in Crossref: 6] [Cited by in F6Publishing: 1] [Article Influence: 3.0] [Reference Citation Analysis]
Number Citing Articles
1 Li C, Zhu H, Zhang Y, Wang Q, Yin X, Li J, Wang G, Kong Z, Ai X, Xie L, Liu Y, Li Y, Huang W, Yan Z, Xiao Z, Radamson HH, Li J, Wang W. First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates. Nano Lett 2021;21:4730-7. [PMID: 34038143 DOI: 10.1021/acs.nanolett.1c01033] [Reference Citation Analysis]
2 Liu Y, Zhu H, Zhang Y, Wang X, Huang W, Li C, Ai X, Wang Q. Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation. J Semicond 2022;43:014101. [DOI: 10.1088/1674-4926/43/1/014101] [Reference Citation Analysis]
3 Zhang Y, Ai X, Yin X, Zhu H, Yang H, Wang GL, Li JJ, Du AY, Li C, Huang WX, Xie L, Li YY, Liu YB, Zhang YB, Jia KP, Wu ZH, Ma XL, Zhang QZ, Mao SJ, Xu GB, Xiang JJ, Gao JF, He XB, Lu YH, Bai GB, Zhao J, Li YL, Yang T, Li JF, Yin HX, Radamson H, Luo J, Zhao C, Wang WW, Ye TC. Vertical Sandwich GAA FETs With Self-Aligned High- k Metal Gate Made by Quasi Atomic Layer Etching Process. IEEE Trans Electron Devices 2021;68:2604-10. [DOI: 10.1109/ted.2021.3072879] [Cited by in Crossref: 5] [Cited by in F6Publishing: 2] [Article Influence: 5.0] [Reference Citation Analysis]