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Cited by in F6Publishing
For: Zhang Y, Ai X, Yin X, Zhu H, Yang H, Wang GL, Li JJ, Du AY, Li C, Huang WX, Xie L, Li YY, Liu YB, Zhang YB, Jia KP, Wu ZH, Ma XL, Zhang QZ, Mao SJ, Xu GB, Xiang JJ, Gao JF, He XB, Lu YH, Bai GB, Zhao J, Li YL, Yang T, Li JF, Yin HX, Radamson H, Luo J, Zhao C, Wang WW, Ye TC. Vertical Sandwich GAA FETs With Self-Aligned High- k Metal Gate Made by Quasi Atomic Layer Etching Process. IEEE Trans Electron Devices 2021;68:2604-10. [DOI: 10.1109/ted.2021.3072879] [Cited by in Crossref: 5] [Cited by in F6Publishing: 3] [Article Influence: 5.0] [Reference Citation Analysis]
Number Citing Articles
1 Xiao ZR, Wang Q, Zhu HL, Chen Z, Zhang YK, Li JJ, Zhou N, Gao JF, Ai XZ, Lu SS, Huang WX, Xiong WJ, Kong ZZ, Xiang JJ, Zhang Y, Zhao J, Liu JB, Lu YH, Bai GB, He XB, Du AY, Wu ZH, Yang T, Li JF, Luo J, Wang WW, Ye TC. Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length. IEEE Electron Device Lett 2022;43:1183-6. [DOI: 10.1109/led.2022.3187006] [Cited by in Crossref: 1] [Article Influence: 1.0] [Reference Citation Analysis]
2 Radamson HH, Wang G. Special Issue: Silicon Nanodevices. Nanomaterials (Basel) 2022;12:1980. [PMID: 35745318 DOI: 10.3390/nano12121980] [Reference Citation Analysis]
3 Xu B, Du Y, Wang G, Xiong W, Kong Z, Zhao X, Miao Y, Wang Y, Lin H, Su J, Li B, Wu Y, Radamson HH. Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate. Materials (Basel) 2022;15:3594. [PMID: 35629618 DOI: 10.3390/ma15103594] [Reference Citation Analysis]