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Cited by in F6Publishing
For: Li C, Zhu H, Zhang Y, Yin X, Jia K, Li J, Wang G, Kong Z, Du A, Yang T, Zhao L, Huang W, Xie L, Li Y, Ai X, Ma S, Radamson HH. Selective Digital Etching of Silicon–Germanium Using Nitric and Hydrofluoric Acids. ACS Appl Mater Interfaces 2020;12:48170-8. [DOI: 10.1021/acsami.0c14018] [Cited by in Crossref: 5] [Cited by in F6Publishing: 4] [Article Influence: 2.5] [Reference Citation Analysis]
Number Citing Articles
1 Xu B, Wang G, Du Y, Miao Y, Wu Y, Kong Z, Su J, Li B, Yu J, Radamson HH. Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs. Nanomaterials (Basel) 2022;12:1403. [PMID: 35564112 DOI: 10.3390/nano12091403] [Reference Citation Analysis]
2 Zhang Q, Gu J, Xu R, Cao L, Li J, Wu Z, Wang G, Yao J, Zhang Z, Xiang J, He X, Kong Z, Yang H, Tian J, Xu G, Mao S, Radamson HH, Yin H, Luo J. Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices. Nanomaterials (Basel) 2021;11:646. [PMID: 33808024 DOI: 10.3390/nano11030646] [Cited by in Crossref: 1] [Article Influence: 1.0] [Reference Citation Analysis]
3 Li C, Zhu H, Zhang Y, Wang Q, Yin X, Li J, Wang G, Kong Z, Ai X, Xie L, Liu Y, Li Y, Huang W, Yan Z, Xiao Z, Radamson HH, Li J, Wang W. First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates. Nano Lett 2021;21:4730-7. [PMID: 34038143 DOI: 10.1021/acs.nanolett.1c01033] [Reference Citation Analysis]
4 Xie L, Zhu H, Zhang Y, Ai X, Li J, Wang G, Du A, Kong Z, Wang Q, Lu S, Li C, Li Y, Huang W, Radamson HH. Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice. Nanomaterials (Basel) 2021;11:1408. [PMID: 34073548 DOI: 10.3390/nano11061408] [Reference Citation Analysis]
5 Li Y, Zhu H, Kong Z, Zhang Y, Ai X, Wang G, Wang Q, Liu Z, Lu S, Xie L, Huang W, Liu Y, Li C, Li J, Lin H, Su J, Zeng C, Radamson HH. The Effect of Doping on the Digital Etching of Silicon-Selective Silicon-Germanium Using Nitric Acids. Nanomaterials (Basel) 2021;11:1209. [PMID: 34063569 DOI: 10.3390/nano11051209] [Cited by in Crossref: 1] [Cited by in F6Publishing: 1] [Article Influence: 1.0] [Reference Citation Analysis]
6 Zhang Y, Ai X, Yin X, Zhu H, Yang H, Wang GL, Li JJ, Du AY, Li C, Huang WX, Xie L, Li YY, Liu YB, Zhang YB, Jia KP, Wu ZH, Ma XL, Zhang QZ, Mao SJ, Xu GB, Xiang JJ, Gao JF, He XB, Lu YH, Bai GB, Zhao J, Li YL, Yang T, Li JF, Yin HX, Radamson H, Luo J, Zhao C, Wang WW, Ye TC. Vertical Sandwich GAA FETs With Self-Aligned High- k Metal Gate Made by Quasi Atomic Layer Etching Process. IEEE Trans Electron Devices 2021;68:2604-10. [DOI: 10.1109/ted.2021.3072879] [Cited by in Crossref: 5] [Cited by in F6Publishing: 2] [Article Influence: 5.0] [Reference Citation Analysis]
7 Xu B, Du Y, Wang G, Xiong W, Kong Z, Zhao X, Miao Y, Wang Y, Lin H, Su J, Li B, Wu Y, Radamson HH. Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate. Materials (Basel) 2022;15:3594. [PMID: 35629618 DOI: 10.3390/ma15103594] [Reference Citation Analysis]