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Cited by in F6Publishing
For: Li J, Wang W, Li Y, Zhou N, Wang G, Kong Z, Fu J, Yin X, Li C, Wang X, Yang H, Ma X, Han J, Zhang J, Wei Y, Hu T, Yang T, Li J, Yin H, Zhu H, Radamson HH. Study of selective isotropic etching Si1−xGex in process of nanowire transistors. J Mater Sci: Mater Electron 2020;31:134-43. [DOI: 10.1007/s10854-019-02269-x] [Cited by in Crossref: 11] [Cited by in F6Publishing: 3] [Article Influence: 3.7] [Reference Citation Analysis]
Number Citing Articles
1 Yin X, Zhu H, Zhao L, Wang G, Li C, Huang W, Zhang Y, Jia K, Li J, Radamson HH. Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si 1−x Ge x. ECS J Solid State Sci Technol 2020;9:034012. [DOI: 10.1149/2162-8777/ab80ae] [Cited by in Crossref: 6] [Cited by in F6Publishing: 1] [Article Influence: 3.0] [Reference Citation Analysis]
2 Li C, Zhu H, Zhang Y, Yin X, Jia K, Li J, Wang G, Kong Z, Du A, Yang T, Zhao L, Huang W, Xie L, Li Y, Ai X, Ma S, Radamson HH. Selective Digital Etching of Silicon–Germanium Using Nitric and Hydrofluoric Acids. ACS Appl Mater Interfaces 2020;12:48170-8. [DOI: 10.1021/acsami.0c14018] [Cited by in Crossref: 5] [Cited by in F6Publishing: 4] [Article Influence: 2.5] [Reference Citation Analysis]
3 Li C, Zhu H, Zhang Y, Wang Q, Yin X, Li J, Wang G, Kong Z, Ai X, Xie L, Liu Y, Li Y, Huang W, Yan Z, Xiao Z, Radamson HH, Li J, Wang W. First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates. Nano Lett 2021;21:4730-7. [PMID: 34038143 DOI: 10.1021/acs.nanolett.1c01033] [Reference Citation Analysis]
4 Gill YJ, Kim DS, Gil HS, Kim KH, Jang YJ, Kim YE, Yeom GY. Cyclic etching of silicon oxide using NF 3 /H 2 remote plasma and NH 3 gas flow. Plasma Process Polym 2021;18:2100063. [DOI: 10.1002/ppap.202100063] [Reference Citation Analysis]